Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands
- Authors
- Han, Jeong Hwan; Jung, Eun Ae; Kim, Hyo Yeon; Kim, Da Hye; Park, Bo Keun; Park, Jin-Seong; Son, Seung Uk; Chung, Taek-Mo
- Issue Date
- Oct-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Novel In precursor; Atomic layer deposition; Indium oxide; Thin film
- Citation
- APPLIED SURFACE SCIENCE, v.383, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 383
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22154
- DOI
- 10.1016/j.apsusc.2016.04.120
- ISSN
- 0169-4332
- Abstract
- In2O3 thin films were grown from a newly developed, liquid, homoleptic, In-based complex, tris(1-dimethylamino-2-methyl-2-propoxy) indium [In(dmamp)(3)], and O-3 by atomic layer deposition (ALD) at growth temperatures of 150-200 degrees C. In(dmamp)(3) exhibited single-step evaporation with negligible residue and excellent thermal stability between 30 and 250 degrees C. The self-limiting surface reaction of In2O3 during ALD was demonstrated by varying the In(dmamp)(3) and O-3 pulse lengths, with a growth rate of 0.027 nm/cycle achieved at 200 degrees C. The In2O3 films grown at temperatures over 175 degrees C exhibited negligible concentrations of impurities, whereas that grown below 175 degrees C had concentrations of residual C of 6-8 at.%. Glancing angle X-ray diffraction revealed that the In2O3 films were polycrystalline in nature when the deposition temperature was greater than 200 degrees C. The In2O3 films grown at 150-200 degrees C exhibited carrier concentrations of 1.5 x 10(18)-6.6 x 10(19) cm(-3), resistivities of 15.1-2 x 10(-3) Omega cm, and Hall mobilities of 0.8-42 cm(2)/(V s).
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