Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers
- Authors
- Lee, Seung-Eun; Takemura, Yasutaka; Park, Jea-Gun
- Issue Date
- Oct-2016
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.109, no.18, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 109
- Number
- 18
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22160
- DOI
- 10.1063/1.4967172
- ISSN
- 0003-6951
- Abstract
- A tunneling magneto-resistance (TMR) ratio of similar to 163% at an annealing temperature of 400 degrees C was achieved in a single MgO-based perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a tungsten (W)/tantalum (Ta) seed and W capping layer instead of with a Ta seed and capping layer. This was done by improving the interface perpendicular magnetic anisotropy (i-PMA) characteristic of the Co2Fe6B2 free layer and face-centered-cubic (f.c.c.) crystallinity of the MgO tunneling barrier. In particular, a TMR ratio of similar to 141% at an annealing temperature of 400 degrees C and a thermal stability at room temperature of similar to 61 were achieved in a double MgO-based p-MTJ spin valve with W/Ta seed, W spacer, and W capping layers by doubling the i-PMA magnetic moment and increasing slightly magnetic anisotropy field (H-k).
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