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Resistive switching memory based on organic/inorganic hybrid perovskite materials
- Issue Date
- Aug-2016
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Perovskite; Memory; Resistive switching
- Citation
- VACUUM, v.130, pp.109 - 112
- Indexed
- SCIE
SCOPUS
- Journal Title
- VACUUM
- Volume
- 130
- Start Page
- 109
- End Page
- 112
- ISSN
- 0042-207X
- Abstract
- In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.
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