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Resistive switching memory based on organic/inorganic hybrid perovskite materials

Authors
Liu, YangLi, FushanChen, ZhixinGuo, TailiangWu, ChaoxingKim, Tae Whan
Issue Date
Aug-2016
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Perovskite; Memory; Resistive switching
Citation
VACUUM, v.130, pp.109 - 112
Indexed
SCIE
SCOPUS
Journal Title
VACUUM
Volume
130
Start Page
109
End Page
112
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22272
DOI
10.1016/j.vacuum.2016.05.010
ISSN
0042-207X
Abstract
In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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