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그림자 효과 완화 및 내화학성 향상을 위한 탄탈륨-니켈 화합물 극자외선 흡수체Ta-Ni Compound EUV Absorber Material to Mitigate Shadowing Effect and Improve Chemical Durability
- Other Titles
- Ta-Ni Compound EUV Absorber Material to Mitigate Shadowing Effect and Improve Chemical Durability
- Authors
- Woo, Dong Gon; Hong, Seongchul; Kim, Jung Sik; Yang, Chul Kyu; Lee, Jong Hwa; Shin, Chul; Ahn, Jinho
- Issue Date
- Jul-2016
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- extreme ultraviolet lithography; semiconductor; sputtering; optical properties; computer simulation
- Citation
- KOREAN JOURNAL OF METALS AND MATERIALS, v.54, no.7, pp.546 - 551
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF METALS AND MATERIALS
- Volume
- 54
- Number
- 7
- Start Page
- 546
- End Page
- 551
- ISSN
- 1738-8228
- Abstract
- Extreme ultraviolet lithography (EUVL) runs in reflective optics and the shadowing effect causes several new issues limiting the performance of EUV mask. To get over this shadowing effect, many studies are made by reducing the absorber thickness with high extinction coefficient materials. Nickel is a promising absorber material candidate which can replace tantalum compounds due to its high extinction coefficient. However, nickel is vulnerable to conventional mask cleaning process. In this paper, novel Ta-Ni compound material is fabricated by co-sputtering process and its improved chemical durability and shadowing effect is presented.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)