Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation
DC Field | Value | Language |
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dc.contributor.author | Choi, Uy Hyun | - |
dc.contributor.author | Yoon, Sungyeol | - |
dc.contributor.author | Yoon, Doo Hyun | - |
dc.contributor.author | Tak, Young Jun | - |
dc.contributor.author | Kim, Yeong Gyu | - |
dc.contributor.author | Ahn, Byung Du | - |
dc.contributor.author | Park, Jin Seong | - |
dc.contributor.author | Kim, Hyun Jae | - |
dc.date.accessioned | 2021-08-02T16:51:12Z | - |
dc.date.available | 2021-08-02T16:51:12Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22943 | - |
dc.description.abstract | In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y₂O₃ (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin Seong | - |
dc.identifier.doi | 10.1088/0022-3727/49/28/285103 | - |
dc.identifier.scopusid | 2-s2.0-84978290999 | - |
dc.identifier.wosid | 000383675600004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.28, pp.1 - 6 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 28 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordAuthor | GeInGaO | - |
dc.subject.keywordAuthor | passivation layer | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | diffusion | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0022-3727/49/28/285103/pdf | - |
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