Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
- Authors
- Shindo, S.; Sutou, Y.; Koike, J.; Saito, Y.; Song, Yun Heub
- Issue Date
- Jun-2016
- Publisher
- ELSEVIER SCI LTD
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.47, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 47
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22995
- DOI
- 10.1016/j.mssp.2016.02.006
- ISSN
- 1369-8001
- Abstract
- We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity rho(c) of as-deposited amorphous GCT to W was 3.9 x 10(-2) Omega cm(2). The value of rho(c) drastically decreased upon crystallization and crystalline GCT that annealed at 300 degrees C showed a rho(c) of 4.8 x 10(-6) Omega cm(2). The rho(c) contrast between amorphous (as-deposited) and crystalline (annealed at 300 degrees C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.
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