Optical and Electrical Characteristics of Graphene Double Layer Formed by a Double Transfer of Graphene Single Layers
- Authors
- Kim, Young Jun; Bae, Gi Yoon; Chun, Sungwoo; Park, Wanjun
- Issue Date
- Mar-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Graphene; Single Graphene Layer; Double Graphene Layer; Graphene Field Effect Transistor
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.3, pp.2769 - 2772
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 3
- Start Page
- 2769
- End Page
- 2772
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23917
- DOI
- 10.1166/jnn.2016.11066
- ISSN
- 1533-4880
- Abstract
- We demonstrate formation of double layer graphene by means of a double transfer using two single graphene layers grown by a chemical vapor deposition method. It is observed that shiftiness and broadness in the double-resonance of Raman scattering are much weaker than those of bilayer graphene formed naturally. Transport characteristics examined from transmission line measurements and field effect transistors show the similar behavior with those of single layer graphene. It indicates that interlayer separation, in electrical view, is large enough to avoid correlation between layers for the double layer structure. It is also observed from a transistor with the double layer graphene that molecules adsorpted on two inner graphene surfaces in the double layered structure are isolated and conserved from ambient environment.
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