Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer
- Authors
- Yang, Hee Yeon; Yun, Dong Yeol; Kim, Yu Na; Hong, Jae-Min; Kim, Tae Whan
- Issue Date
- Feb-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Nonvolatile Memory Device; Polydopamine; Switching Mechanism; Capacitance-Voltage
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1685 - 1688
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 2
- Start Page
- 1685
- End Page
- 1688
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24013
- DOI
- 10.1166/jnn.2016.11967
- ISSN
- 1533-4880
- Abstract
- Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24013)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.