Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers
- Authors
- Kim, Woo Kyum; Wu, Chaoxing; Lee, Dea Uk; Kim, Hyoun Woo; Kim, Tae Whan
- Issue Date
- Jan-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Graphene oxide; Mica; PVK; Nanocomposite; Organic bistable device
- Citation
- APPLIED SURFACE SCIENCE, v.429, pp.231 - 236
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 429
- Start Page
- 231
- End Page
- 236
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2450
- DOI
- 10.1016/j.apsusc.2017.08.105
- ISSN
- 0169-4332
- Abstract
- Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 x 10(4), which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 x 10(2) cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The "erase" voltages were distributed between 2.3 and 3V, and the "write" voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 x 10(4) s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
- 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.