Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex
DC Field | Value | Language |
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dc.contributor.author | Han, Jeong Hwan | - |
dc.contributor.author | Kim, Hyo Yeon | - |
dc.contributor.author | Lee, Sang Chan | - |
dc.contributor.author | Kim, Da Hye | - |
dc.contributor.author | Park, Bo Keun | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Jeon, Dong Ju | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Kim, Chang Gyoun | - |
dc.date.accessioned | 2021-08-02T17:51:20Z | - |
dc.date.available | 2021-08-02T17:51:20Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24719 | - |
dc.description.abstract | Anew bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 degrees C in combination with NH3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm(3) at 200-250 degrees C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 degrees C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.apsusc.2015.11.095 | - |
dc.identifier.scopusid | 2-s2.0-84959502411 | - |
dc.identifier.wosid | 000368657900025 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.362, pp.176 - 181 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 362 | - |
dc.citation.startPage | 176 | - |
dc.citation.endPage | 181 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TAN THIN-FILMS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | TA3N5 | - |
dc.subject.keywordAuthor | Tantalum nitride | - |
dc.subject.keywordAuthor | Plasma-enhanced atomic layer deposition | - |
dc.subject.keywordAuthor | Metal-organic precursor | - |
dc.subject.keywordAuthor | Copper diffusion barrier | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433215027907?via%3Dihub | - |
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