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Cited 6 time in webofscience Cited 8 time in scopus
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Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex

Authors
Han, Jeong HwanKim, Hyo YeonLee, Sang ChanKim, Da HyePark, Bo KeunPark, Jin-SeongJeon, Dong JuChung, Taek-MoKim, Chang Gyoun
Issue Date
Jan-2016
Publisher
ELSEVIER
Keywords
Tantalum nitride; Plasma-enhanced atomic layer deposition; Metal-organic precursor; Copper diffusion barrier
Citation
APPLIED SURFACE SCIENCE, v.362, pp.176 - 181
Indexed
SCIE
SCOPUS
Journal Title
APPLIED SURFACE SCIENCE
Volume
362
Start Page
176
End Page
181
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24719
DOI
10.1016/j.apsusc.2015.11.095
ISSN
0169-4332
Abstract
Anew bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 degrees C in combination with NH3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm(3) at 200-250 degrees C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 degrees C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.
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