Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex
- Authors
- Han, Jeong Hwan; Kim, Hyo Yeon; Lee, Sang Chan; Kim, Da Hye; Park, Bo Keun; Park, Jin-Seong; Jeon, Dong Ju; Chung, Taek-Mo; Kim, Chang Gyoun
- Issue Date
- Jan-2016
- Publisher
- ELSEVIER
- Keywords
- Tantalum nitride; Plasma-enhanced atomic layer deposition; Metal-organic precursor; Copper diffusion barrier
- Citation
- APPLIED SURFACE SCIENCE, v.362, pp.176 - 181
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 362
- Start Page
- 176
- End Page
- 181
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24719
- DOI
- 10.1016/j.apsusc.2015.11.095
- ISSN
- 0169-4332
- Abstract
- Anew bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150-250 degrees C in combination with NH3 plasma. The TaN PEALD showed a saturated growth rate of 0.062 nm/cycle and a high film density of 9.1-10.3 g/cm(3) at 200-250 degrees C. Auger depth profiling revealed that the deposited TaN film contained low carbon and oxygen impurity levels of approximately 3-4%. N-rich amorphous TaN films were grown at all growth temperatures and showed highly resistive characteristic. The Cu barrier performance of the TaN film was evaluated by annealing of Cu/TaN (0-6 nm)/Si stacks at 400-800 degrees C, and excellent Cu diffusion barrier properties were observed even with ultrathin 2 nm-thick TaN film.
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