AlGaN/GaN Schottky HEMTs with UV/O3 Plasma-treated Gate Interface
- Authors
- Kim, Kwangeun; Kim, Tong June; Zhang, Huilong; Liu, Dong; Jung, Yei Hwan; Gong, Jiarui; Ma, Zhenqiang
- Issue Date
- Oct-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlGaN/GaN; Schottky HEMT; UV/O₃
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.41, no.10, pp.1488 - 1491
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 41
- Number
- 10
- Start Page
- 1488
- End Page
- 1491
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2573
- DOI
- 10.1109/LED.2020.3019339
- ISSN
- 0741-3106
- Abstract
- The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O-3) treatment applied to Al-0.3 Ga-0.7 N/GaN heterostructure on the electrical performance of AlGaN/GaN Schottky-gate HEMT were investigated. The reverse-bias leakage current of Schottky diode was reduced by three orders after the treatment. X-ray photoelectron spectroscopy confirms the formation of the Ga2Ox layer which serves as an interface passivation layer and thus suppresses trap-assisted electron tunneling. Capacitance-voltage measurements of AlGaN/GaN HEMT show shifts of threshold and on-set voltages, indicating decreased surface states as a result of the treatment. The electrical characteristics of AlGaN/GaN HEMT exhibit improved transconductance and subthreshold swing values after the treatment.
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