Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light

Abstract

This study demonstrates the efficient photo-annealing of a solution-processed metal oxide active layer in thin film transistors by using intensely pulsed white light (IPWL) irradiation. The IPWL process offers the advantages of room-temperature processing and high processing speed of the order of milliseconds under ambient conditions. Analysis of the chemical composition of the IPWL-annealed thin films indicates that the IPWL irradiation provides sufficient heat energy to convert the molecular precursors to the respective metal oxides. A solution-processed amorphous In-Ga-Zn-O transistor annealed by IPWL irradiation exhibited improved electrical performance with a field-effect mobility of 2.67 cm(2) V-1 s(-1) and I-on/I(of)f of 10(8). The suitability of IPWL for annealing other solution-processed metal oxide semiconductors was verified in IPWL-annealed Hf-In-Zn-O and In-Zn-O thin films.