Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light
- Authors
- Yoo, Tae-Hee; Kwon, Seong-Ji; Kim, Hak-Sung; Hong, Jae-Min; Lim, Jung Ah; Song, Yong-Won
- Issue Date
- Apr-2014
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- RSC ADVANCES, v.4, no.37, pp.19375 - 19379
- Indexed
- SCIE
SCOPUS
- Journal Title
- RSC ADVANCES
- Volume
- 4
- Number
- 37
- Start Page
- 19375
- End Page
- 19379
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/25903
- DOI
- 10.1039/c4ra01371a
- ISSN
- 2046-2069
- Abstract
- This study demonstrates the efficient photo-annealing of a solution-processed metal oxide active layer in thin film transistors by using intensely pulsed white light (IPWL) irradiation. The IPWL process offers the advantages of room-temperature processing and high processing speed of the order of milliseconds under ambient conditions. Analysis of the chemical composition of the IPWL-annealed thin films indicates that the IPWL irradiation provides sufficient heat energy to convert the molecular precursors to the respective metal oxides. A solution-processed amorphous In-Ga-Zn-O transistor annealed by IPWL irradiation exhibited improved electrical performance with a field-effect mobility of 2.67 cm(2) V-1 s(-1) and I-on/I(of)f of 10(8). The suitability of IPWL for annealing other solution-processed metal oxide semiconductors was verified in IPWL-annealed Hf-In-Zn-O and In-Zn-O thin films.
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