Highly Reliable Electronic Synapse Based on Au@Al2O3 Core-Shell Nanoparticles for Neuromorphic Applications
- Authors
- Ma, Fumin; Xu, Zhongwei; Liu, Yang; Zheng, Yueting; Chen, Wei; Hu, Hailong; Guo, Tailiang; Li, Fushan; Wu, Chaoxing; KIM, TAE WHAN
- Issue Date
- Oct-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Electronic synapse; Au nanoparticle; memristor; artificial intelligence; atomic layer deposition; in-situ formation
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.10, pp.1610 - 1613
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 10
- Start Page
- 1610
- End Page
- 1613
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2612
- DOI
- 10.1109/LED.2019.2934895
- ISSN
- 0741-3106
- Abstract
- Simulating synaptic function and building brain-inspired computers have received widespread attention. The memristor is considered to be an electronic version of the synapse and an excellent element for creating a brand-new artificial intelligence system in the future. However, most memristor-based electronic synapses currently exhibit low stability due to complex resistance switching processes. Based on a controllable in-situ formation strategy that we were able to employ with atomic layer deposition, we fabricated electronic synapses based on Au@Al2O3 core-shell nanoparticles. Our device exhibited extremely reliable, stable, and durable performance and showed a capability to emulate biological synaptic behavior, including synaptic plasticity, long-term depression (LTD), long-term potentiation (LTP), amplitude dependence, and frequency dependence. This research provides a strategy for manufacturing highly-reliable electronic synapses for neuromorphic applications.
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