Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Kim, Min Jae | - |
dc.contributor.author | Seul, Hyunjoo | - |
dc.contributor.author | Yun, Pil Sang | - |
dc.contributor.author | Bae, Jong Uk | - |
dc.contributor.author | Park, Kwon-Shik | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-07-30T05:00:43Z | - |
dc.date.available | 2021-07-30T05:00:43Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 1598-0316 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2626 | - |
dc.description.abstract | This paper reports the effect of the cation composition on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) where atomic layer deposition (ALD) was used to deposit an a-IGZO channel layer. The In0.38Ga0.18Zn0.44O transistors at a 200 degrees C annealing temperature exhibited 39.4cm(2)/V.s field effect mobility (mu(FE)), -0.12V threshold voltage (V-TH), 0.40 V/decade subthreshold gate swing (SS), and >10(7) I-ON/OFF ratio, corresponding to the state-of-the-art characteristics of transistors with a sputtered IGZO channel. Further enhancement of the mu(FE) value was observed for the devices with a higher In fraction: the In0.45Ga0.15Zn0.40O transistor had a higher mu(FE) value of 48.3 cm(2)/V.s, -4.06 V V-TH, 0.45 V/decade SS, and >10(7) I-ON/OFF ratio. The cation composition dependence on the performance of the a-IGZO TFTs was explained by analysing the density-of-state (DOS) distribution for the corresponding devices using the experimental independent variable (IV) and theoretical Technology Computer-aided Design (TCAD) simulation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1080/15980316.2018.1540365 | - |
dc.identifier.scopusid | 2-s2.0-85056153180 | - |
dc.identifier.wosid | 000474870800003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF INFORMATION DISPLAY, v.20, no.2, pp.73 - 80 | - |
dc.relation.isPartOf | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.title | JOURNAL OF INFORMATION DISPLAY | - |
dc.citation.volume | 20 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 73 | - |
dc.citation.endPage | 80 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002475104 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | indium gallium zinc oxide | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordAuthor | density of state | - |
dc.identifier.url | https://www.tandfonline.com/doi/full/10.1080/15980316.2018.1540365 | - |
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