Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer depositionopen access
- Authors
- Cho, Min Hoe; Kim, Min Jae; Seul, Hyunjoo; Yun, Pil Sang; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong
- Issue Date
- Apr-2019
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Atomic layer deposition; indium gallium zinc oxide; thin-film transistor; high mobility; density of state
- Citation
- JOURNAL OF INFORMATION DISPLAY, v.20, no.2, pp.73 - 80
- Indexed
- SCOPUS
KCI
- Journal Title
- JOURNAL OF INFORMATION DISPLAY
- Volume
- 20
- Number
- 2
- Start Page
- 73
- End Page
- 80
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2626
- DOI
- 10.1080/15980316.2018.1540365
- ISSN
- 1598-0316
- Abstract
- This paper reports the effect of the cation composition on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) where atomic layer deposition (ALD) was used to deposit an a-IGZO channel layer. The In0.38Ga0.18Zn0.44O transistors at a 200 degrees C annealing temperature exhibited 39.4cm(2)/V.s field effect mobility (mu(FE)), -0.12V threshold voltage (V-TH), 0.40 V/decade subthreshold gate swing (SS), and >10(7) I-ON/OFF ratio, corresponding to the state-of-the-art characteristics of transistors with a sputtered IGZO channel. Further enhancement of the mu(FE) value was observed for the devices with a higher In fraction: the In0.45Ga0.15Zn0.40O transistor had a higher mu(FE) value of 48.3 cm(2)/V.s, -4.06 V V-TH, 0.45 V/decade SS, and >10(7) I-ON/OFF ratio. The cation composition dependence on the performance of the a-IGZO TFTs was explained by analysing the density-of-state (DOS) distribution for the corresponding devices using the experimental independent variable (IV) and theoretical Technology Computer-aided Design (TCAD) simulation.
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