Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer
- Authors
- Lee, Yong Hun; Kim, Dae Hun; Wu, Chaoxing; Kim, Tae Whan
- Issue Date
- Nov-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Memristive devices; MAPbBr(3) perovskite; Electrical characteristics; Carrier transport mechanism; Operating mechanism
- Citation
- ORGANIC ELECTRONICS, v.62, pp.412 - 418
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 62
- Start Page
- 412
- End Page
- 418
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2661
- DOI
- 10.1016/j.orgel.2018.08.034
- ISSN
- 1566-1199
- Abstract
- Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH3NH3PbBr3 (MAPbBr(3) ) perovskite layer. The nanocrystalline MAPbBr(3) perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr(3) perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr(3)/Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr(3) perovskite was as large as 3.6 x 10(6). The memristive devices showed high device-to-device reproducibility with set-voltage distributions between -0.5 and -0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1 x 10(4) s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr(3) perovskite.
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