플래시 메모리 칩의 잔류응력 제거를 위한 IPL 어닐링Intense pulsed light annealing to reduce the residual stress in ultra-thin flash memory chip
- Other Titles
- Intense pulsed light annealing to reduce the residual stress in ultra-thin flash memory chip
- Authors
- 전은범; 김학성
- Issue Date
- Nov-2012
- Publisher
- 대한기계학회
- Keywords
- Fracture strength(파괴강도); IPL annealing(IPL 어닐링); Raman spectroscopy(라만 스펙트로스코피); Residual stress(잔류응력)
- Citation
- 대한기계학회 2012년도 추계학술대회 논문집, no. , pp.371 - 375
- Indexed
- OTHER
- Journal Title
- 대한기계학회 2012년도 추계학술대회 논문집
- Start Page
- 371
- End Page
- 375
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27433
- Abstract
- Recently, ultra-thin chips with thicknesses of under 35 ㎛ have emerged as an option for thinner, high performance electronic devices. For reliable electronic devices and high throughput packaging processes, the mechanical properties of ultra-thin chips need to be accurately understood. Especially, the residual stress occurred due to shear force between the grinding wheel/ polish pad in wafer thinning process occurred in wafer thinning process could be affected the fracture strength of ultra-thin device. In this paper, the optimal condition to reduce the residual stress of the ultra-thin chip was found with respect to the various wafer thinning parameters. The residual stresses distributions along the thickness direction of the ultra-thin flash memory chip before/after IPL annealing were measured using Raman spectroscopy. To validate the IPL annealing, we perform the BOR test to measure the fracture strength of ultra-thin flash memory chip. From the study, the effect of the residual stress and the fracture strength of ultra-thin flash memory chip with respect to IPL annealing were discussed.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 기계공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.