Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobilityopen access
- Authors
- Xu, Xiaoqing; Zhong, Jiebin; So, Hongyun; Norvilas, Aras; Sommerhalter, Christof; Senesky, Debbie G.; Tang, Mary
- Issue Date
- Nov-2016
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.6, no.11, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP ADVANCES
- Volume
- 6
- Number
- 11
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2795
- DOI
- 10.1063/1.4967816
- ISSN
- 2158-3226
- Abstract
- In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.
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