Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors
- Authors
- So, Hongyun; Lim, Jongwoo; Senesky, Debbie G.
- Issue Date
- May-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gallium nitride; harsh environments; photodetector; ultraviolet; V-grooved surfaces
- Citation
- IEEE SENSORS JOURNAL, v.16, no.10, pp.3633 - 3639
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 16
- Number
- 10
- Start Page
- 3633
- End Page
- 3639
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2812
- DOI
- 10.1109/JSEN.2016.2531181
- ISSN
- 1530-437X
- Abstract
- Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted in higher photodetector sensitivity (57.4% increase at room temperature and 139% at 200°C) compared with conventional designs on planar substrates due to the increased absorption of incident UV light (optical trapping). In addition, a 53% reduction in electrical resistance at room temperature and 27.3% at 200°C were observed due to the increased surface area. The decay time for the non-exponential persistent photoconductivity decreased significantly from 327 to 34 sec as the temperature increased from room temperature to 200°C as a result of the accelerated electron-hole pair recombination (generation) rate. These results support the use of textured AlGaN/GaN sensor platforms for UV detection in harsh environments (e.g., downhole, combustion, and space).
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