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The Resistive Switching Characteristics of Nanocrystalline HfO2 Films Grown by Fast Atomic Layer Deposition with La(NO3)36H20 Solution
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-02T22:27:26Z | - |
| dc.date.available | 2021-08-02T22:27:26Z | - |
| dc.date.issued | 2017-11-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/29919 | - |
| dc.title | The Resistive Switching Characteristics of Nanocrystalline HfO2 Films Grown by Fast Atomic Layer Deposition with La(NO3)36H20 Solution | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2017 MRS Fall Meeting & Exhibit | - |
| dc.citation.conferencePlace | Boston, Massachusetts, USA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)