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The Resistive Switching Characteristics of Nanocrystalline HfO2 Films Grown by Fast Atomic Layer Deposition with La(NO3)36H20 Solution
- Authors
- 안진호
- Issue Date
- 28-Nov-2017
- Place
- Boston, Massachusetts, USA
- Conference Name
- 2017 MRS Fall Meeting & Exhibit
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)