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High performance memory device with vertical structures of MGr/hBN/WS2 layers
- Authors
- 김은규
- Issue Date
- 19-Jul-2017
- Publisher
- EDISON 20 Committee
- Citation
- 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON 20)
- Conference Name
- 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON 20)
- Place
- Buffalo, New York
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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