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The Effect of Titanium Tetrachloride-based Plasma Enhanced ALD TiN on the Threshold Voltage of Gate Last-Like Processed FD-SOI MOSFET with ALD HfO2 Gate Dielectric
- Authors
- 최창환
- Issue Date
- 16-Jul-2017
- Place
- Denver, USA
- Conference Name
- 17th International Conference on Atomic Layer Deposition (ALD 2017)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)