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The Effects of Process Temperature on the Work Function Modulation of ALD HfO2 MOS Device with Plasma Enhanced ALD TiN Metal Gate Using TDMAT Precursor Development
- Authors
- 최창환
- Issue Date
- 28-Jun-2017
- Place
- 포츠담, 독일
- Conference Name
- Conference on Insulating Films on Semiconductors (INFOS)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)