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Improved Interface State Density (Dit) Characteristics of ALD HKMG GaN MOS Device with Surface Passivation
- Authors
- 최창환
- Issue Date
- 22-Jun-2017
- Place
- Suntec, Singapore
- Conference Name
- International Conference on Materials for Advanced Technologies (ICMAT 2017)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)