Ultralow Voltage Driving Circuits Based on Coplanar a-InGaZnO TFTs with Photopatternable Ionic Polymer Gate Dielectric
- Authors
- Lee, Dayoon; Kim, Yongchan; Kim, So Young; Kim, Do Hwan; Lee, Hojin
- Issue Date
- Oct-2019
- Publisher
- WILEY
- Keywords
- coplanar structures; electric double layer; ionic polymer gate dielectric; solution-processed a-InGaZnO; thin film transistors
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.5, no.10, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 5
- Number
- 10
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/32815
- DOI
- 10.1002/aelm.201900359
- ISSN
- 2199-160X
- Abstract
- Coplanar amorphous indium gallium zinc oxide (a-InGaZnO) thin film transistors (TFTs) with photopatternable ionic polymer gate dielectrics are fabricated and their inverter/shift register circuits are demonstrated. As a gate dielectric, ionic-polyurethane acrylate (i-PUA) can be patterned as small as 20 mu m through conventional photolithography to achieve superior electrical properties at low operating voltages by the electric double layer formation, inducing ultrahigh channel capacitance. The fabricated solution-processed a-InGaZnO TFT with the i-PUA gate dielectric shows excellent electrical characteristics such as a field-effect mobility of 11.6 cm(2) V-1 s(-1), on-off ratio exceeding 10(7), and low threshold voltage of 0.3 V. It is also confirmed that the inverter and shift register can be fabricated based on the proposed coplanar a-InGaZnO TFTs and are successfully functional even at 60 Hz operating frequency with driving voltage levels below 3 V.
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