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Program/erase characteristic variations of the vertical NAND flash memory devices dependent on channel layer thickness
- Authors
- 김태환
- Issue Date
- 13-Jul-2016
- Publisher
- 나노기술연구협의회
- Citation
- The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea
- Conference Name
- The 14th International Nanotech Symposium & Nano-Convergence Expo in Korea
- Place
- KINTEX, KOREA
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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