Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy

Abstract

Effect of high pressure hydrogen annealing on polysilicon thin film transistors has been evaluated using a novel acquisition setup and analysis of deep trap states. Trap density was extracted with high resolution of density and energy level. Trap density was reduced by one order of magnitude after annealing. Passivation effect was maintained even after a strong hot carrier injection stress.