Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co₂Fe₆B₂ Free Layer Structureopen access
- Authors
- Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun
- Issue Date
- Dec-2016
- Publisher
- SPRINGEROPEN
- Keywords
- p-MTJ; BEOL; TMR ratio; Pt diffusion; Top and bottom free layer
- Citation
- NANOSCALE RESEARCH LETTERS, v.11, no.1, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 11
- Number
- 1
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3629
- DOI
- 10.1186/s11671-016-1637-9
- ISSN
- 1931-7573
- Abstract
- For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 degrees C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 degrees C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of similar to 143 %.
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