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Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application
- Authors
- Kang, Shinyoung; Lee, Juyoung; Song, Yun Heub
- Issue Date
- Oct-2020
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- artificial synaptic device; interfacial phase change memory; neuromorphic devices; phase change memory; superlattice
- Citation
- Proceedings - International SoC Design Conference, ISOCC 2020, pp.169 - 170
- Indexed
- SCOPUS
- Journal Title
- Proceedings - International SoC Design Conference, ISOCC 2020
- Start Page
- 169
- End Page
- 170
- Abstract
- In this paper, an interfacial phase change memory (iPCM) based on superlattice (SL) structure was fabricated by stacking GeTe/Sb2Te3 alternatively, and synaptic characteristics such as linearity and symmetry of long-Term potentiation (LTP)/long-Term depression (LTD) were measured by Keithley 4200A-CSC parameter analyzer. The conventional phase change memory (PCM) based on Ge-Sb-Te alloy with the identical bottom electrode contact size was also fabricated for comparison.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)