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The enhancement of electrical characteristics of silicon based tunneling field-effect transistors with a buried cylindrical gate

Authors
김태환
Issue Date
8-Dec-2015
Publisher
Applied Physics Division, Korean Physical Society
Citation
The 9th International Conference on Advanced Materials and Devices
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/37742
Conference Name
The 9th International Conference on Advanced Materials and Devices
Place
Jeju, Korea
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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