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Improved Electrical Properties of GaN MOS Capacitor with NH3 Plasma Treatment
- Authors
- 최창환
- Issue Date
- 27-Oct-2015
- Publisher
- MRS-Korea
- Citation
- International Union of Materials Research Socities-International Conference on Advanced Materials (IUMRS-ICMA)
- Conference Name
- International Union of Materials Research Socities-International Conference on Advanced Materials (IUMRS-ICMA)
- Place
- Jeju
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)