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Remote Plasma Atomic Layer Deposited Al2O3 4H SiC MOS Capacitor with H2 Plasma Passivation and Post Metallization Annealing
- Authors
- 최창환
- Issue Date
- 30-Jun-2015
- Place
- Udine, Italy
- Conference Name
- Insulating Films on Semiconductors (INFOS)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)