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Low Gate Leakage Current and Interface State Density of ALD Al2O3 SiC MOS Device with NH3 Plasma Treatment
- Authors
- 최창환
- Issue Date
- 25-Jun-2015
- Place
- Ramada Plaza Jeju
- Conference Name
- International Forum on Functional Materials (IFFM)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)