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Multilevel characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing graphene oxide floating gate and polystyrene organic insulator
- Authors
- 김태환
- Issue Date
- 7-Dec-2014
- Publisher
- The Semiconductor Physics Division, The Korean Physical Society
- Citation
- The 17th International Symposium on the Physics of Semiconductors and Applications
- Conference Name
- The 17th International Symposium on the Physics of Semiconductors and Applications
- Place
- Ramada Plaza Jeju Hotel, Jeju, Korea
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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