Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of the interface roughness of the high-k dielectric layer on the electron mobility in the channel of the MOSFETs
- Authors
- 김태환
- Issue Date
- 7-Dec-2014
- Publisher
- The Semiconductor Physics Division, The Korean Physical Society
- Citation
- The 17th International Symposium on the Physics of Semiconductors and Applications
- Conference Name
- The 17th International Symposium on the Physics of Semiconductors and Applications
- Place
- Ramada Plaza Jeju Hotel, Jeju, Korea
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.