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Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET
- Authors
- 박재근
- Issue Date
- 31-Oct-2014
- Place
- SUMCO Kyushu Factory (Imari)
- Conference Name
- 1st symposium for International Advanced Functional Materials & Devices
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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