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Analysis of new interconnection covering top metallization layer for 650V GaN e-HEMT power modules
- Authors
- Seong, J.; Kim, M.K.; Yoon, S.W.
- Issue Date
- Dec-2019
- Citation
- PCIM Europe Conference Proceedings, v.1, pp 1958 - 1963
- Pages
- 6
- Indexed
- SCOPUS
- Journal Title
- PCIM Europe Conference Proceedings
- Volume
- 1
- Start Page
- 1958
- End Page
- 1963
- ISSN
- 2191-3358
- Abstract
- This paper presents a new interconnection design for power modules. The interconnection has a shape d contact to be fit with the top metal of power semiconductors and is especially designed for GaN e-HE MT devices having a unique top-side metallization layer design and lateral conduction channel. This interconnection can reduce parasitic inductance/resistance and mitigate current density and thermal concentration in power modules. These advantages are validated by finite element method (FEM) simulations. In addition, to accommodate manufacturing inconvenience, an adjusted interconnection shape is al so analyzed.
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Collections - 서울 공과대학 > 서울 미래자동차공학과 > 1. Journal Articles
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