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Modelling of Phase Change Memory(PCM) cell for Circuit Simulation
- Issue Date
- Oct-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Modelling; OTS; PCM; PRAM
- Citation
- Proceedings - 2019 International SoC Design Conference, ISOCC 2019, pp.170 - 171
- Indexed
- SCOPUS
- Journal Title
- Proceedings - 2019 International SoC Design Conference, ISOCC 2019
- Start Page
- 170
- End Page
- 171
- ISSN
- 2163-9612
- Abstract
- PRAMs with PCM and OTS have been reported and applied for the crossbar array structure. The characteristics of PCM and OTS have significant effects on the PRAM operation. This paper introduces a novel PCM, and OTS macro-model based on the physical mechanisms of them and CMOS based OTS operation mimicking circuitry for chip demonstration. PCM/OTS macro modelling allows designers to understand the device behaviour at developing of cell operating system and OTS mimicking circuitry helps test for demonstration chip evaluation.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)