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Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition
- Issue Date
- Jun-2019
- Publisher
- IEEE
- Keywords
- Logical gates; NAND; nanoelectromechanical switches; NOR; selective chemical vapor deposition
- Citation
- International Solid-State Sensors, Actuators and Microsystems Conference, pp 1709 - 1711
- Pages
- 3
- Indexed
- SCOPUS
- Journal Title
- International Solid-State Sensors, Actuators and Microsystems Conference
- Start Page
- 1709
- End Page
- 1711
- ISSN
- 2167-0013
2167-0021
- Abstract
- NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)