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Development of PCM and OTS Macro-models for HSPICE Compatible Simulation
- Issue Date
- Mar-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Macro-model; OTS; PCM; PRAM
- Citation
- 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, pp.463 - 465
- Indexed
- SCOPUS
- Journal Title
- 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
- Start Page
- 463
- End Page
- 465
- ISSN
- 0000-0000
- Abstract
- PRAMs with PCM and OTS have been reported and applied for the crossbar array structure. The characteristics of PCM and OTS have significant effects on the PRAM operation. This paper introduces a novel PCM and OTS macro-model based on the physical mechanisms of them. The developed macro-model includes several intermediate states of PCM and OTS occurring during memory operation. This allows designers to understand the device behavior accurately and design more reliable PRAM after considering various device effects.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)