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Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구A investigation on electrical properties of poly-GaAs channel in 3D NAND flash memory
- Other Titles
- A investigation on electrical properties of poly-GaAs channel in 3D NAND flash memory
- Issue Date
- Nov-2016
- Publisher
- 대한전자공학회
- Citation
- 대한전자공학회 학술대회, pp.219 - 222
- Indexed
- OTHER
- Journal Title
- 대한전자공학회 학술대회
- Start Page
- 219
- End Page
- 222
- ISSN
- 12296368
- Abstract
- In this paper, we investigated the threshold voltage (VT) dispersion and on-current in poly-GaAs used for a channel material in 3D NAND flash memory. Using simulation, stings of NAND flash memory with 12, 24, 36, and 48 cells were implemented and electrical properties were extracted. It is revealed that the on-current in poly-GaAs channel is larger than in poly-Si channel due to the difference in mobility. In addition, the VT dispersion tends to decrease as the numbers of stacked layers increase in case of poly-GaAs channel.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)