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Work-Function Modulation and Further EOT scaling of High-K/Metal Gate Device

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dc.contributor.author최창환-
dc.date.accessioned2021-08-03T13:20:57Z-
dc.date.available2021-08-03T13:20:57Z-
dc.date.created2021-06-30-
dc.date.issued2013-01-30-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/49058-
dc.publisherSEMI-
dc.titleWork-Function Modulation and Further EOT scaling of High-K/Metal Gate Device-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitationSemicon Korea 2013 (SEMI)-SEMI Technology Symposium-
dc.relation.isPartOfSemicon Korea 2013 (SEMI)-SEMI Technology Symposium-
dc.citation.titleSemicon Korea 2013 (SEMI)-SEMI Technology Symposium-
dc.citation.conferencePlaceCOEX, SEOUL-
dc.type.rimsCONF-
dc.description.journalClass2-
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