Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The device instability of thermally annealed TiOx Thin film transistors under gate bias stresses
- Authors
- 박진성
- Issue Date
- 16-Sep-2012
- Publisher
- EMRA
- Citation
- International conference on electronic materials and nanotechnology for green environment
- Conference Name
- International conference on electronic materials and nanotechnology for green environment
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)