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Resistive switching behaviors in TiOx-based multi-layers for next-generation nonvolatile memory applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T15:51:32Z | - |
| dc.date.available | 2021-08-03T15:51:32Z | - |
| dc.date.issued | 2011-11-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53022 | - |
| dc.title | Resistive switching behaviors in TiOx-based multi-layers for next-generation nonvolatile memory applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 10th 2011 Korea-Uzbekistan joint international symposium on quantum functional materials and dev | - |
| dc.citation.conferencePlace | 한국 동국대학교 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)