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Resistive switching behaviors in TiOx-based multi-layers for next-generation nonvolatile memory applications

Authors
홍진표
Issue Date
28-Nov-2011
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53022
Place
한국 동국대학교
Conference Name
The 10th 2011 Korea-Uzbekistan joint international symposium on quantum functional materials and dev
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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