Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
- Authors
- Shuang, Y.; Sutou, Y.; Hatayama, S.; Shindo, S.; Song, Yun Heub; Ando, D.; Koike, J.
- Issue Date
- Apr-2018
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.112, no.18
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 112
- Number
- 18
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/5311
- DOI
- 10.1063/1.5029327
- ISSN
- 0003-6951
- Abstract
- Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode.
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