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The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode
- Authors
- 최창환
- Issue Date
- 7-Jul-2011
- Publisher
- National Natural Science Foundataion of China, Dalian University of Technology, Division of Plasma E
- Citation
- The Third International Conference on Microelectronics and Plasma Technology
- Conference Name
- The Third International Conference on Microelectronics and Plasma Technology
- Place
- Dalian (대련), China (중국)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)